An efficient BICS design for SEUs detection and correction in semiconductor memories

Author

Gill, Balkaran ; Nicolaidis, Michael ; Wolff, Francis ; Papachristou, Chris ; Garverick, Steven

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA

fYear

2005

fDate

7-11 March 2005

Firstpage

592

Abstract

We propose a new built-in current sensor (BICS) to detect single event upsets (SEUs) in SRAM. The BICS is designed and validated for 100 nm process technology. The BICS reliability analysis is provided for process, voltage and temperature variations, and power supply noise. The BICS detects various shapes of current pulses generated due to particle strike. The BICS power consumption and area overhead are also provided. The BICS is found to be very reliable for process, voltage and temperature variations and under stringent noise conditions.

Keywords

SRAM chips; electric sensing devices; integrated circuit design; integrated circuit reliability; microsensors; power consumption; random noise; 100 nm; SRAM single event upset detection; area overhead; built-in current sensor design; current pulse shapes; particle strike; power consumption; power supply noise; process variation; reliability analysis; semiconductor memories; temperature variation; voltage variation; Event detection; Noise shaping; Power supplies; Random access memory; Semiconductor device noise; Semiconductor memory; Single event transient; Single event upset; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Design, Automation and Test in Europe, 2005. Proceedings

ISSN

1530-1591

Print_ISBN

0-7695-2288-2

Type

conf

DOI

10.1109/DATE.2005.54

Filename

1395633