Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors

Author

McDermott, M.G. ; Sweeney, C. ; Benedek, M. ; Dawe, G.

Author_Institution

GAMMA Monolithics, Woburn, MA, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

103

Lastpage

106

Abstract

High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semiinsulating GaAs substrate for millimeter-wave monolithic IC applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz, with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. A monolithic Ka-band voltage-controlled oscillator using these devices has been built and tested. Output powers of 60 mW with 70 MHz of tuning bandwidth and 40 mW with 120 MHz of tuning bandwidth have been measured at 32 GHz.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave oscillators; tuning; varactors; variable-frequency oscillators; 0.25 micron; 120 MHz; 32 to 78 GHz; 40 mW; 60 mW; 70 MHz; GaAs; Ka band; MESFETs; VCO; VFO; abrupt varactor diodes; integrated high-Q varactors; millimeter-wave; monolithic IC applications; quarter micron; semiinsulating GaAs substrate; submicron device; tuning bandwidth; voltage-controlled oscillator; Application specific integrated circuits; Bandwidth; Diodes; Electrical resistance measurement; Gallium arsenide; MESFET integrated circuits; Millimeter wave measurements; Submillimeter wave integrated circuits; Tuning; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110949

Filename

110949