Current status of the phase change memory and its future

With the increasing challenge of scaling floating gate nonvolatile memory technology to beyond 65 nm, alternative memory technologies are being investigated. Chalcogenide based phase change memory (R. Neale et al, Electronics, p56-60, 1970) is one of the alternative memory candidates. In this review, the physics and operation of phase change memory are first presented, followed by a discussion of the current status of development. Finally, the scaling capability of the technology is presented. The scaling projection shows that there is no physical limit to scaling down to the 22 nm node, with a number of technical challenges being identified.