• DocumentCode
    2589026
  • Title

    Broad band monolithic cross point switch matrices

  • Author

    Powell, S. ; Becker, P. ; Dupuis, M. ; Nagy, C.

  • Author_Institution
    Lockheed Sanders Inc., Nashua, NH, USA
  • fYear
    1990
  • fDate
    7-8 May 1990
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    A series of broadband monolithic switch matrices has been fabricated. Circuits covering DC to 18 GHz are described, including a 4 to 10-GHz fully monolithic 2 by 2 matrix on a single chip with 4-dB insertion loss and greater than 40-dB isolation. The circuits utilize a high-isolation microstrip crossover. The matrix approach uses orthogonal input and output lines with an independent switching element at each crosspoint. Only a small percent of the input signal is extracted at each crosspoint, so the input line can be continued to drive additional crosspoints. The light coupling from the lines requires the crosspoints to provide gain to prevent excessive insertion loss in the matrix. The switching element uses dual-gate FETs to provide both gain and isolation.<>
  • Keywords
    MMIC; field effect integrated circuits; semiconductor switches; switching circuits; 0 to 18 GHz; broadband; cross point switch matrices; dual-gate FETs; high-isolation microstrip crossover; insertion loss; monolithic switch matrices; orthogonal input; FETs; Impedance; Insertion loss; Microstrip; Microwave technology; Parasitic capacitance; Switches; Switching circuits; Transmission line matrix methods; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
  • Conference_Location
    Dallas, TX, USA
  • Type

    conf

  • DOI
    10.1109/MCS.1990.110955
  • Filename
    110955