DocumentCode :
2589026
Title :
Broad band monolithic cross point switch matrices
Author :
Powell, S. ; Becker, P. ; Dupuis, M. ; Nagy, C.
Author_Institution :
Lockheed Sanders Inc., Nashua, NH, USA
fYear :
1990
fDate :
7-8 May 1990
Firstpage :
127
Lastpage :
130
Abstract :
A series of broadband monolithic switch matrices has been fabricated. Circuits covering DC to 18 GHz are described, including a 4 to 10-GHz fully monolithic 2 by 2 matrix on a single chip with 4-dB insertion loss and greater than 40-dB isolation. The circuits utilize a high-isolation microstrip crossover. The matrix approach uses orthogonal input and output lines with an independent switching element at each crosspoint. Only a small percent of the input signal is extracted at each crosspoint, so the input line can be continued to drive additional crosspoints. The light coupling from the lines requires the crosspoints to provide gain to prevent excessive insertion loss in the matrix. The switching element uses dual-gate FETs to provide both gain and isolation.<>
Keywords :
MMIC; field effect integrated circuits; semiconductor switches; switching circuits; 0 to 18 GHz; broadband; cross point switch matrices; dual-gate FETs; high-isolation microstrip crossover; insertion loss; monolithic switch matrices; orthogonal input; FETs; Impedance; Insertion loss; Microstrip; Microwave technology; Parasitic capacitance; Switches; Switching circuits; Transmission line matrix methods; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
Type :
conf
DOI :
10.1109/MCS.1990.110955
Filename :
110955
Link To Document :
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