DocumentCode
2589026
Title
Broad band monolithic cross point switch matrices
Author
Powell, S. ; Becker, P. ; Dupuis, M. ; Nagy, C.
Author_Institution
Lockheed Sanders Inc., Nashua, NH, USA
fYear
1990
fDate
7-8 May 1990
Firstpage
127
Lastpage
130
Abstract
A series of broadband monolithic switch matrices has been fabricated. Circuits covering DC to 18 GHz are described, including a 4 to 10-GHz fully monolithic 2 by 2 matrix on a single chip with 4-dB insertion loss and greater than 40-dB isolation. The circuits utilize a high-isolation microstrip crossover. The matrix approach uses orthogonal input and output lines with an independent switching element at each crosspoint. Only a small percent of the input signal is extracted at each crosspoint, so the input line can be continued to drive additional crosspoints. The light coupling from the lines requires the crosspoints to provide gain to prevent excessive insertion loss in the matrix. The switching element uses dual-gate FETs to provide both gain and isolation.<>
Keywords
MMIC; field effect integrated circuits; semiconductor switches; switching circuits; 0 to 18 GHz; broadband; cross point switch matrices; dual-gate FETs; high-isolation microstrip crossover; insertion loss; monolithic switch matrices; orthogonal input; FETs; Impedance; Insertion loss; Microstrip; Microwave technology; Parasitic capacitance; Switches; Switching circuits; Transmission line matrix methods; Transmission lines;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location
Dallas, TX, USA
Type
conf
DOI
10.1109/MCS.1990.110955
Filename
110955
Link To Document