Title :
Taking SOI substrates and low-k dielectrics into high-volume microprocessor production
Author :
Greenlaw, D. ; Burbach, G. ; Feudel, T. ; Feustel, F. ; Frohberg, K. ; Graetsch, F. ; Grasshoff, G. ; Hartig, C. ; Heller, T. ; Hempel, K. ; Horstmann, M. ; Huebler, P. ; Kirsch, R. ; Kruegel, S. ; Langer, E. ; Pawlowitsch, A. ; Ruelke, H. ; Schuehrer, H.
Author_Institution :
Adv. Micro Devices, AMD Saxony LLC, Dresden, Germany
Abstract :
SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming these challenges in wafer processing and transistor development, we have achieved yield learning and performance enhancement rates equivalent to or better than conventional technologies.
Keywords :
dielectric thin films; integrated circuit manufacture; microprocessor chips; silicon-on-insulator; SOI substrates; high-volume manufacturing; high-volume microprocessor production; low-k dielectrics; performance enhancement rates; production maturity; transistor development; wafer processing; yield learning; Delay; Dielectric substrates; Etching; Isolation technology; Microprocessors; Plasma applications; Production; Pulp manufacturing; Semiconductor films; Transistors;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269278
