A robust 65-nm node CMOS technology for wide-range Vdd operation

Author

Nakahara, Y. ; Fukai, T. ; Togo, M. ; Koyama, S. ; Morikuni, H. ; Matsuda, T. ; Sakamoto, K. ; Mineji, A. ; Fujiwara, S. ; Kunimune, Y. ; Nagase, M. ; Tamura, T. ; Onoda, N. ; Miyake, S. ; Yama, Y. ; Kudoh, T. ; Ikeda, M. ; Yamagata, Y. ; Yamamoto, T. ; I

Author_Institution

Adv. Technol. Dev. Div., NEC Electron. Corp., Kanagawa, Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

We have developed a highly reliable 65 nm node CMOS technology, enabling a wide-range of Vdd operation, including overdrive mode. Process conditions are carefully optimized from the various aspects of device reliability and performance. We have utilized an oxynitride gate, arsenic-assisted phosphorus S/D ion-implantation, Ni-silicidation, stress controlled SiN layer process, and an offset-spacer process in order to improve the drive-current at low voltage operation and reliability at high voltage operation. The obtained drive-currents are 730/310 /spl mu/A//spl mu/m with an off-current of 80 nA//spl mu/m at a standard supply voltage of 0.9 V, and 1150/550 /spl mu/A//spl mu/m with an off-current of 180 nA//spl mu/m at an overdrive voltage of 1.2 V, while satisfying strict criteria for transistor reliability.

Keywords

CMOS integrated circuits; integrated circuit reliability; ion implantation; low-power electronics; 0.9 V; 1.2 V; 65 nm; Ni-silicidation; SiN; arsenic-assisted phosphorus S/D ion-implantation; drive-current improvement; high voltage operation; low voltage operation; offset-spacer process; overdrive voltage; oxynitride gate; robust CMOS technology; standard voltage; stress controlled SiN layer process; transistor reliability; wide-range Vdd operation; Boron; CMOS technology; Implants; MOSFETs; National electric code; Niobium compounds; Plasma applications; Robustness; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269279

Filename

1269279