DocumentCode

2589130

Title

A New Dielectric Breakdown Mechanism In Silicon Dioxides

Author

Okada, K.

Author_Institution

Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570 Japan

fYear

1997

fDate

10-12 June 1997

Firstpage

143

Lastpage

144

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

conf

DOI

10.1109/VLSIT.1997.623739

Filename

623739