DocumentCode :
2589130
Title :
A New Dielectric Breakdown Mechanism In Silicon Dioxides
Author :
Okada, K.
Author_Institution :
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd. 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570 Japan
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
143
Lastpage :
144
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
Type :
conf
DOI :
10.1109/VLSIT.1997.623739
Filename :
623739
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2589130
