Title :
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]
Author :
Samavedam, S.B. ; La, L.B. ; Tobin, P.J. ; White, B. ; Hobbs, C. ; Fonseca, L.R.C. ; Demkov, A.A. ; Schaeffer, J. ; Luckowski, E. ; Martinez, A. ; Raymond, M. ; Triyoso, D. ; Roan, D. ; Dhandapani, V. ; Garcia, R. ; Anderson, S.G.H. ; Moore, K. ; Tseng, H
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola, Austin, TX, USA
Abstract :
We have examined the impact of small and systematic changes at the metal/dielectric interface on metal work-function and report on Fermi level pinning of TaN, TaSiN and TiN gates on SiO/sub 2/, Al/sub 2/O/sub 3/ and HfO/sub 2/ for the first time. The shifts in work-function agree in most cases with the MIGS theory if accurate theoretical parameters are used.
Keywords :
Fermi level; MOSFET; alumina; hafnium compounds; metal-insulator boundaries; silicon compounds; tantalum compounds; titanium compounds; work function; Al/sub 2/O/sub 3/; Fermi level pinning; HfO/sub 2/; MIGS theory; MOSFET; SiO/sub 2/; TaN; TaSiN; TiN; metal gates; metal work-function shifts; metal/dielectric interface changes; sub-monolayer MeOx; Atherosclerosis; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; Laboratories; MOSFET circuits; Microelectronics; Research and development; Tin;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269286
