Title :
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
Author :
Kedzierski, J. ; Boyd, D. ; Ronsheim, P. ; Zafar, S. ; Newbury, J. ; Ott, J. ; Cabral, C., Jr. ; Ieong, M. ; Haensch, W.
Author_Institution :
Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Silicidation-induced impurity segregation was found to be an excellent method for adjusting the workfunction of NiSi gates. Continuous workfunction control over 300 mV was obtained with P, As, and Sb used as gate impurities. Fully depleted silicon-on-insulator devices were fabricated with a tunable V/sub t/.
Keywords :
MOSFET; antimony; arsenic; doping profiles; impurity distribution; nickel compounds; phosphorus; segregation; silicon-on-insulator; work function; 300 mV; MOSFET threshold voltage control; NiSi-gated MOSFET; NiSi:As; NiSi:P; NiSi:Sb; SIIS; SOI; fully depleted silicon-on-insulator devices; gate impurities; silicidation induced impurity segregation; tunable threshold voltage; workfunction control; Annealing; Dielectrics; Doping; Implants; MOSFETs; Semiconductor impurities; Silicidation; Thickness control; Threshold voltage; Voltage control;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269288
