Performance improvement of MOSFET with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate gate dielectric and CVD-TaN metal gate deposited by TAIMATA

Author

Seong Geon Park ; You Kyoung Lee ; Sang Bom Kang ; Hyung Suk Jung ; Seok Joo Doh ; Jong-Ho Lee ; Jae Ho Choi ; Gyeong Hoon Kim ; Gil Heyun Choi ; U In Chung ; Joo Tae Moon

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea

fYear

2003

fDate

8-10 Dec. 2003

Abstract

For the first time, we integrated a HfO/sub 2/-Al/sub 2/O/sub 3/ laminate gate dielectric with a CVD-TaN metal gate deposited by TAIMATA (tertiaryamylimidotris dimethylamidotantalum) in n/pMOSFETs. It was found that TaN films with low impurity contents were required for optimized capacitance. Together with a slight improvement of the transconductance and a substantial gain in inversion EOT with HfAlO/TaN, improved current drivability was observed in comparison to nitrided-SiO/sub 2//poly-Si and HfAlON/poly-Si with similar EOTs. In addition, CVD-TaN resulted in improved J/sub g/ characteristics, showing F-N tunneling behavior with an effective barrier height of 1.1 eV in nMOS in the inversion region. These results suggest that a CVD-TaN metal gate is necessary for the implementation and scaling of high-k gate dielectrics.

Keywords

MOSFET; alumina; chemical vapour deposition; dielectric thin films; hafnium compounds; tantalum compounds; tunnelling; 1.1 eV; CVD-TaN metal gate; F-N tunneling behavior; HfO/sub 2/-Al/sub 2/O/sub 3/-TaN; MOSFET performance improvement; TAIMATA deposition; TaN film impurity content; capacitance optimization; current drivability; effective barrier height; high-k gate dielectrics; inversion EOT gain; inversion region nMOS; laminated gate dielectric; nMOSFET; pMOSFET; tertiaryamylimidotris dimethylamidotantalum; transconductance; Capacitance; Gas insulated transmission lines; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Laminates; Leakage current; MOSFET circuits; Moon; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269291

Filename

1269291