Title :
A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFETs
Author :
Mahapatra, S. ; Kumar, P.B. ; Alam, M.A.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
Bias temperature instability (BTI) and its underlying physical mechanism are studied for thin gate oxide MOSFETs. For p-MOSFETs stressed in inversion for a long-time, BTI increase is observed at high stress temperature. This is shown to be due to higher interface trap generation because of faster hydrogen diffusion in the gate poly. Enhanced BTI affects device lifetime and is strongly influenced by gate oxide scaling, as discussed.
Keywords :
MOSFET; diffusion; hydrogen; interface states; semiconductor device models; thermal stability; BTI physical mechanism; H/sub 2/; device lifetime; enhanced bias temperature instability; gate oxide scaling; gate poly hydrogen diffusion; interface trap generation; inversion stressed MOSFET; stress temperature; thin gate oxide p-MOSFET; Artificial intelligence; CMOS analog integrated circuits; Hot carriers; Hydrogen; MOSFET circuits; Stress; Temperature; Threshold voltage; Virtual colonoscopy;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269293
