Title :
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
Author :
Chin, A. ; Chan, K.T. ; Huang, C.H. ; Chen, C. ; Liang, V. ; Chen, J.K. ; Chien, S.C. ; Sun, S.W. ; Duh, D.S. ; Lin, W.J. ; Chunxiang Zhu ; Li, M.F. ; McAlister, S.P. ; Dim-Lee Kwong
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.
Keywords :
coplanar waveguides; inductors; ion implantation; microstrip filters; microstrip lines; microstrip resonators; 100 GHz; RF passive devices; Si; Si substrates; broad band filters; high quality RF inductors; low loss CPW; low noise CPW; microstrip filters; microstrip lines; microstrip ring resonators; narrow band filters; optimized proton implantation process; Band pass filters; Coplanar waveguides; Inductors; Microstrip filters; Microstrip resonators; Narrowband; Optical ring resonators; Protons; Radio frequency; Resonator filters;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269302
