RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation

Author

Chin, A. ; Chan, K.T. ; Huang, C.H. ; Chen, C. ; Liang, V. ; Chen, J.K. ; Chien, S.C. ; Sun, S.W. ; Duh, D.S. ; Lin, W.J. ; Chunxiang Zhu ; Li, M.F. ; McAlister, S.P. ; Dim-Lee Kwong

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.

Keywords

coplanar waveguides; inductors; ion implantation; microstrip filters; microstrip lines; microstrip resonators; 100 GHz; RF passive devices; Si; Si substrates; broad band filters; high quality RF inductors; low loss CPW; low noise CPW; microstrip filters; microstrip lines; microstrip ring resonators; narrow band filters; optimized proton implantation process; Band pass filters; Coplanar waveguides; Inductors; Microstrip filters; Microstrip resonators; Narrowband; Optical ring resonators; Protons; Radio frequency; Resonator filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269302

Filename

1269302