Title :
High performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for RF and mixed signal IC applications
Author :
Hang Hu ; Shi-Jin Ding ; Lim, H.F. ; Chunxiang Zhu ; Li, M.F. ; Kim, S.J. ; Yu, X.F. ; Chen, J.H. ; Yong, Y.F. ; Byung Jin Cho ; Chan, D.S.H. ; Rustagi, S.C. ; Yu, M.B. ; Tung, C.H. ; Anyan Du ; Doan My ; Foot, P.D. ; Chin, A. ; Dim-Lee Kwong
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
In this paper, a high performance ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz to 20 GHz, low leakage current of 7.45/spl times/10/sup -9/ A/cm/sup 2/ at 2 V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.
Keywords :
MIM devices; alumina; atomic layer deposition; capacitors; hafnium compounds; leakage currents; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; reliability; 10 kHz to 20 GHz; 2 V; ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate; HfO/sub 2/-Al/sub 2/O/sub 3/; RF IC; capacitance density; high performance MIM capacitors; leakage current; metal-insulator-metal capacitor; mixed signal IC; reliability; voltage coefficient of capacitance; Capacitance; Hafnium oxide; Laminates; Leakage current; Low voltage; MIM capacitors; Materials reliability; Metal-insulator structures; RF signals; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269303
