Title :
All-ITO gate, two-phase CCD image sensor technology
Author :
Losee, D.L. ; Johnson, J.A. ; Kosman, S.L. ; Kurfiss, N.T. ; Putnam, G.G.
Author_Institution :
Eastman Kodak Co., Rochester, NY, USA
Abstract :
A new, all-ITO gate, two-phase CCD technology is presented. It features low dark current, excellent charge transfer efficiency, and more than 2/spl times/ improvement in quantum efficiency (QE) at shorter visible and near-ultraviolet wavelengths. A novel "spectral smoothing" feature improves QE wavelength variation and flat-field response uniformity.
Keywords :
CCD image sensors; charge exchange; dark conductivity; indium compounds; tin compounds; InSnO; QE wavelength variation; all-ITO gate CCD image sensor; charge transfer efficiency; dark current; flat-field response uniformity; near-ultraviolet wavelengths; quantum efficiency; shorter visible wavelengths; spectral smoothing; two-phase CCD image sensor technology; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Dark current; Electrodes; Etching; Implants; Optical surface waves; Pixel;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269307
