DocumentCode
2589557
Title
All-ITO gate, two-phase CCD image sensor technology
Author
Losee, D.L. ; Johnson, J.A. ; Kosman, S.L. ; Kurfiss, N.T. ; Putnam, G.G.
Author_Institution
Eastman Kodak Co., Rochester, NY, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
A new, all-ITO gate, two-phase CCD technology is presented. It features low dark current, excellent charge transfer efficiency, and more than 2/spl times/ improvement in quantum efficiency (QE) at shorter visible and near-ultraviolet wavelengths. A novel "spectral smoothing" feature improves QE wavelength variation and flat-field response uniformity.
Keywords
CCD image sensors; charge exchange; dark conductivity; indium compounds; tin compounds; InSnO; QE wavelength variation; all-ITO gate CCD image sensor; charge transfer efficiency; dark current; flat-field response uniformity; near-ultraviolet wavelengths; quantum efficiency; shorter visible wavelengths; spectral smoothing; two-phase CCD image sensor technology; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Clocks; Dark current; Electrodes; Etching; Implants; Optical surface waves; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269307
Filename
1269307
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