Title :
A simple and high-performance 130 nm SOI eDRAM technology using floating-body pass-gate transistor in trench-capacitor cell for system-on-a-chip (SoC) applications
Author :
Kumar, M. ; Steigerwalt, M.D. ; Walsh, B.L. ; Doney, T.L. ; Wildrick, D. ; Bard, K.A. ; Dobuzinsky, D.M. ; McFarland, P.A. ; Schiller, C.E. ; Messenger, B. ; Rathmill, S.E. ; Gasasira, A.R. ; Parries, P.C. ; Iyer, S.S. ; Chaloux, S.E. ; Ho, H.L.
Author_Institution :
IBM Microelectron. Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
Abstract :
This paper, for the first time, reports a fully-functional 130 nm trench-based eDRAM (embedded DRAM), built in unpatterned SOI. The functionality of the eDRAM is shown by the test results of: (a) 524 Kb ADM (array diagnostic monitors) macros and (b) 16 Mb product macros. The eDRAM functionality is enabled by using low-leakage floating-body array pass transistors. The support logic circuitry of the eDRAM is built using IBM´s high-performance 130 nm SOI logic process technology. Wafer fixable yield as high as 67% has been obtained for 524 Kb ADMs. In addition, 16 Mb product macros were built and found to be fully fixable, exhibiting retention time on the order of 80 ms. This technology allows a simple and low-cost integration of trench-based eDRAM with high-performance SOI logic for system-on-a-chip (SoC) applications.
Keywords :
DRAM chips; silicon-on-insulator; system-on-chip; 130 nm; 16 Mbit; 524 Kbit; 80 ms; ADM macros; SOI eDRAM technology; SOI logic process technology; SoC; array diagnostic monitors; embedded DRAM; floating-body pass-gate transistor; low-leakage transistors; retention time; system-on-a-chip; trench-based eDRAM; trench-capacitor cell; unpatterned SOI; wafer fixable yield; Add-drop multiplexers; Amorphous silicon; Capacitors; Circuit testing; Etching; Logic circuits; Microelectronics; Research and development; Silicon compounds; System-on-a-chip;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269312
