Title :
Issues in NiSi-gated FDSOI device integration
Author :
Kedzierski, J. ; Boyd, D. ; Ying Zhang ; Steen, M. ; Jamin, F.F. ; Benedict, J. ; Meikei Ieong ; Haensch, W.
Author_Institution :
IBM Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Thin-body fully depleted silicon on insulator (FDSOI) devices with NiSi metal gates were fabricated with gate lengths down to 20 nm. Specific issues in the integration of the NiSi-gated FDSOI devices were investigated, in particular: gate CMP, the phase stability of the nickel silicide, and parasitic resistance.
Keywords :
chemical mechanical polishing; nickel compounds; silicon-on-insulator; 20 nm; NiSi; NiSi-gated FDSOI device integration; SOI; fully depleted silicon on insulator devices; gate CMP; gate length; nickel silicide phase stability; parasitic resistance; thin-body FDSOI; Annealing; Fabrication; Immune system; Nickel; Research and development; Silicidation; Silicides; Silicon on insulator technology; Stability; Temperature;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269317
