DocumentCode :
2589803
Title :
Anomalous Radiation Damage Effect on Capacitance of Si Diodes
Author :
Babcock, R.V. ; Malinaric, P.J.
Author_Institution :
Westinghouse Electric Corporation, Research and Development Laboratories, Radiation and Nucleonics Laboratory, Pittsburgh, Pennsylvania
fYear :
1962
fDate :
Sept. 1962
Firstpage :
56
Lastpage :
67
Keywords :
Capacitance; Conductivity; Electrons; Laboratories; Neutrons; Nuclear electronics; Predictive models; Radiation detectors; Radiation effects; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Failure in Electronics, 1962. First Annual Symposium on the
Conference_Location :
Chicago, IL, USA
ISSN :
0097-2088
Type :
conf
DOI :
10.1109/IRPS.1962.359983
Filename :
4201989
Link To Document :
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