DocumentCode
2589814
Title
Re-investigation of MOS inversion layer mobility from non-universality and possible new scattering mechanism aspects
Author
Irie, H. ; Kita, K. ; Kyuno, K. ; Toriumi, A.
Author_Institution
Dept. of Mater. Sci., Tokyo Univ., Japan
fYear
2003
fDate
8-10 Dec. 2003
Abstract
This paper reports a systematic re-investigation of the universality of MOS inversion layer mobility through careful measurement. We demonstrate for the first time that the definition of the effective normal field for characterizing the universality is variable with the normal electric field, temperature, and substrate doping concentration. In addition, we propose that another new scattering mechanism should be involved to explain the mobility behavior around 100 K.
Keywords
MOSFET; carrier mobility; doping profiles; inversion layers; phonons; scattering; semiconductor device measurement; 100 K; MOS inversion layer mobility; MOSFET; angle limited phonon scattering mechanism; effective normal field; low temperature mobility behavior; mobility universality; substrate doping concentration; Doping; Impurities; MOSFETs; Materials science and technology; Parasitic capacitance; Performance evaluation; Q measurement; Scattering parameters; Temperature; Variable structure systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269321
Filename
1269321
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