Title :
Assessment of Ge n-MOSFETs by quantum simulation
Author :
Rahman, A. ; Ghosh, A. ; Lundstrom, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Quantum simulations of ultra-thin-body (UTB), double-gate (DG), end of the ITRS-2001 roadmap germanium n-MOSFETs are performed using the non-equilibrium Green´s function (NEGF) formalism. Ballistic simulations show that Ge (111) n-MOSFETs suffer from high source-to-drain tunneling in the off-state and low semiconductor capacitance in the on-state. However, devices fabricated on Ge (100) wafers perform better compared to their silicon counterparts. Design optimization studies show that a stiff tolerance for body thickness variations and a super-steep source-drain doping gradient are necessary to optimize the device performance. Finally, it was observed from quantum scattering simulations that the source-drain series resistance limits the otherwise near-ballistic intrinsic device operation.
Keywords :
Green´s function methods; MOSFET; ballistic transport; doping profiles; elemental semiconductors; germanium; optimisation; scattering; semiconductor device models; tunnelling; Ge; Ge (100) n-MOSFET; Ge (111) n-MOSFET; NEGF; UTB DGMOSFET; ballistic simulations; body thickness variations tolerance; double gate MOSFET; nonequilibrium Green´s function; optimization; quantum scattering; quantum simulation; semiconductor capacitance; source-drain series resistance; source-to-drain tunneling; super-steep source-drain doping gradient; ultra-thin-body MOSFET; Design optimization; Germanium; Green´s function methods; Immune system; MOSFET circuits; Particle scattering; Quantum capacitance; Semiconductor device doping; Silicon; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269324
