Alleviating electromigration through re-engineering the interface between Cu & dielectric-diffusion-barrier in 90 nm Cu/SiOC (k=2.9) device

Author

Young Jin Wee ; Soo Geun Lee ; Won Sang Song ; Kyoung-Woo Lee ; Nam Hyung Lee ; Ja Eung Ku ; Ki-Kwan Park ; Seung Jin Lee ; Jae Hak Kim ; Joo Hyuk Chung ; Hong Jae Shin ; Sang Rok Hah ; Ho-Kyu Kang ; Gwang Pyuk Suh

Author_Institution

Adv. Process Dev. Team, Samsun Electron. Co. Ltd., Kyunggi-Do, South Korea

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Despite the initial success in integrating a 90 nm Cu/SiOC (k=2.9) device using the HSQ via-filler scheme, the reliability issues remain. By correlating electromigration (EM) with the moisture blocking capability of the dielectric-diffusion-barrier, we target the factors contributing to the moisture blockage, namely, the N and H-content within SiC. Consequently, increasing the N/H ratio in the SiCN film, we demonstrated a significant enhancement in EM reliability.

Keywords

copper; dielectric thin films; diffusion barriers; electromigration; semiconductor device metallisation; semiconductor device reliability; silicon compounds; 90 nm; Cu-SiOC; Cu/dielectric-diffusion-barrier interface; HSQ via-filler scheme; SiCN; SiCN film N/H ratio; barrier moisture blocking capability; device reliability; electromigration; low-k dielectrics; moisture blockage; Chemicals; Current density; Dielectric devices; Electromigration; Etching; Helium; Moisture; Nitrogen; Silicon carbide; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269338

Filename

1269338