Title :
Hybrid silicon/molecular memories: co-engineering for novel functionality
Author :
Gowda, S. ; Mathur, G. ; Qihang Li ; Surthi, S. ; Qian Zhao ; Lindsey, J.S. ; Mobley, K. ; Bocian, D.F. ; Misra, V.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The properties of silicon in hybrid CMOS/molecular capacitors were successfully engineered to produce multiple bit and long retention-time devices. Charge storage molecules were attached to silicon substrates to produce multiple bit and long retention time characteristics that may be attractive for nanoscale high density memory applications.
Keywords :
CMOS memory circuits; elemental semiconductors; hybrid integrated circuits; integrated circuit measurement; molecular electronics; nanoelectronics; silicon; Si; charge storage molecules; co-engineering; functionality; hybrid CMOS/molecular capacitors; hybrid silicon/molecular memories; multiple bit long retention-time devices; nanoscale high density memory applications; silicon substrates; Bridge circuits; CMOS technology; Capacitors; Chemical technology; Chemistry; Diodes; Low voltage; Oxidation; Performance analysis; Silicon devices;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269339
