DocumentCode
2590157
Title
Hybrid silicon/molecular memories: co-engineering for novel functionality
Author
Gowda, S. ; Mathur, G. ; Qihang Li ; Surthi, S. ; Qian Zhao ; Lindsey, J.S. ; Mobley, K. ; Bocian, D.F. ; Misra, V.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
The properties of silicon in hybrid CMOS/molecular capacitors were successfully engineered to produce multiple bit and long retention-time devices. Charge storage molecules were attached to silicon substrates to produce multiple bit and long retention time characteristics that may be attractive for nanoscale high density memory applications.
Keywords
CMOS memory circuits; elemental semiconductors; hybrid integrated circuits; integrated circuit measurement; molecular electronics; nanoelectronics; silicon; Si; charge storage molecules; co-engineering; functionality; hybrid CMOS/molecular capacitors; hybrid silicon/molecular memories; multiple bit long retention-time devices; nanoscale high density memory applications; silicon substrates; Bridge circuits; CMOS technology; Capacitors; Chemical technology; Chemistry; Diodes; Low voltage; Oxidation; Performance analysis; Silicon devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269339
Filename
1269339
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