Mode conversion in high overtone bulk acoustic wave resonators

Author

Pijolat, M. ; Mercier, D. ; Reinhardt, A. ; Defaÿ, E. ; Deguet, C. ; Aïd, M. ; Moulet, J.S. ; Ghyselen, B. ; Ballandras, S.

Author_Institution

LETI, MINATEC, Grenoble, France

fYear

2009

fDate

20-24 April 2009

Firstpage

290

Lastpage

294

Abstract

High overtone bulk acoustic resonators (HBAR) have been realized using the Smart Cuttrade technology to transfer a thin X-cut LiNbO₃ layer onto an X-cut LiNbO₃ substrate. When the bonding of the two wafers is performed, an additional rotation along the normal axis is set to generate mode conversion between the two acoustic shear waves electromechanically coupled in X-cut LiNbO₃. This enables excitation of only one of the two acoustic shear waves.

Keywords

acoustic resonators; bulk acoustic wave devices; crystal resonators; wafer bonding; LiNbO₃; Smart Cut technology; acoustic shear wave excitation; acoustic shear waves; electromechanical coupling; high-overtone bulk acoustic resonators; mode conversion; piezoelectric device; transfer techniques; wafer bonding; Acoustic devices; Acoustic propagation; Acoustic transducers; Acoustic waves; Film bulk acoustic resonators; Lithium niobate; Q factor; Substrates; Surface acoustic waves; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International

Conference_Location

Besancon

ISSN

1075-6787

Print_ISBN

978-1-4244-3511-1

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2009.5168188

Filename

5168188