Title :
Mode conversion in high overtone bulk acoustic wave resonators
Author :
Pijolat, M. ; Mercier, D. ; Reinhardt, A. ; Defaÿ, E. ; Deguet, C. ; Aïd, M. ; Moulet, J.S. ; Ghyselen, B. ; Ballandras, S.
Author_Institution :
LETI, MINATEC, Grenoble, France
Abstract :
High overtone bulk acoustic resonators (HBAR) have been realized using the Smart Cuttrade technology to transfer a thin X-cut LiNbO3 layer onto an X-cut LiNbO3 substrate. When the bonding of the two wafers is performed, an additional rotation along the normal axis is set to generate mode conversion between the two acoustic shear waves electromechanically coupled in X-cut LiNbO3. This enables excitation of only one of the two acoustic shear waves.
Keywords :
acoustic resonators; bulk acoustic wave devices; crystal resonators; wafer bonding; LiNbO3; Smart Cut technology; acoustic shear wave excitation; acoustic shear waves; electromechanical coupling; high-overtone bulk acoustic resonators; mode conversion; piezoelectric device; transfer techniques; wafer bonding; Acoustic devices; Acoustic propagation; Acoustic transducers; Acoustic waves; Film bulk acoustic resonators; Lithium niobate; Q factor; Substrates; Surface acoustic waves; Wafer bonding;
Conference_Titel :
Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International
Conference_Location :
Besancon
Print_ISBN :
978-1-4244-3511-1
Electronic_ISBN :
1075-6787
DOI :
10.1109/FREQ.2009.5168188
