Title :
600V AlGaN/GaN power-HEMT: design, fabrication and demonstration on high voltage DC-DC converter
Author :
Saito, W. ; Takada, Y. ; Kuraguchi, M. ; Tsuda, K. ; Omura, I. ; Ogura, T.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A 600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down converter circuit, showing the future possibility of high efficiency and high frequency operations of AlGaN/GaN power HEMTs.
Keywords :
DC-DC power convertors; III-V semiconductors; aluminium compounds; gallium compounds; power HEMT; wide band gap semiconductors; 600 V; AlGaN-GaN; DC-DC down converter; high efficiency operation; high frequency operation; high voltage DC-DC converter; high voltage power electronics; motor drives; power supplies; power-HEMT; Aluminum gallium nitride; Circuits; DC-DC power converters; Fabrication; Gallium nitride; HEMTs; Motor drives; Power electronics; Power supplies; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269351
