Title :
A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory
Author :
Muralidhar, R. ; Steimle, R.F. ; Sadd, M. ; Rao, R. ; Swift, C.T. ; Prinz, E.J. ; Yater, J. ; Grieve, L. ; Harber, K. ; Hradsky, B. ; Straub, S. ; Acred, B. ; Paulson, W. ; Chen, W. ; Parker, L. ; Anderson, S.G.H. ; Rossow, M. ; Merchant, T. ; Paransky, M
Author_Institution :
Digital DNA Labs., Motorola Inc., Austin, TX, USA
Abstract :
The first functional 6 V, 4 Mb silicon nanocrystal based nonvolatile memory arrays using conventional 90 nm and 0.25 /spl mu/m process technologies have been produced. The technology can be programmed and erased using conventional techniques in floating gate memories and can substantially reduce the cost of embedded flash at the 90 nm node and beyond.
Keywords :
PLD programming; elemental semiconductors; flash memories; integrated circuit measurement; integrated memory circuits; microprogramming; nanoelectronics; nanostructured materials; random-access storage; silicon; 0.25 micron; 4 Mbit; 6 V; 90 nm; Si; embedded flash memories; embedded silicon nanocrystal nonvolatile memory; erase techniques; floating gate memories; process technologies; programming techniques; silicon nanocrystal based nonvolatile memory arrays; CMOS process; CMOS technology; Dielectrics; Human computer interaction; Nanocrystals; Nonvolatile memory; SONOS devices; Silicon; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269353
