Title :
Electrical characterization of thin SiO2 films created by negative-point oxygen corona discharge processing
Author :
Sayedi, S.M. ; Landsberger, L.M. ; Kahrizi, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Abstract :
Corona-discharge processing to create SiO2 layers has been the subject of several previous publications. The research showed that low-temperature (600°C-800°C) corona-processed SiO2 films having thickness ~1000 Å had physical characteristics comparable to those obtained for films grown by standard thermal oxidation at higher temperatures (1000°C-1200°C). Also considering the temperature of processing, it was found that densities of fixed oxide charges and midgap interface states of the films were lower (better) than expected. In this report, thin oxide films (~200 Å) are grown using a negative point-to-plane corona discharge. A thorough electrical characterization is initiated in order to determine whether a corona-based technique has potential application in thin gate oxides for MOS devices. Preliminary results indicate that the electrical properties and reliability of corona-processed oxides may be favorable
Keywords :
MIS devices; characteristics measurement; corona; discharges (electric); interface states; semiconductor device reliability; silicon compounds; 200 angstrom; 600 to 800 degC; MOS devices; SiO2; electrical characterization; fixed oxide charges; midgap interface states; negative-point corona discharge processing; physical characteristics; point-to-plane corona discharge; reliability; thin gate oxides; Breakdown voltage; Capacitance-voltage characteristics; Corona; Frequency; Interface states; MOS devices; Oxidation; Oxygen; Silicon; Temperature;
Conference_Titel :
Electrical and Computer Engineering, 1996. Canadian Conference on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-3143-5
DOI :
10.1109/CCECE.1996.548039
