Title :
FinFET SONOS flash memory for embedded applications
Author :
Peiqi Xuan ; Min She ; Harteneck, B. ; Liddle, A. ; Bokor, J. ; King, T.-J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared.
Keywords :
MOS memory circuits; MOSFET; dielectric thin films; flash memories; integrated circuit design; integrated circuit measurement; integrated circuit reliability; silicon-on-insulator; 40 nm; FD-SOI FinFET SONOS flash memory devices; FinFET SONOS flash memory; Si; Si-SiO/sub 2/; Si[100] surfaces; Si[110] surfaces; body contact; embedded applications; memory endurance; memory reading disturbance; memory retention time; program/erase characteristics; scalable gate length; silicon surfaces; CMOS technology; Electrons; Fabrication; FinFETs; Flash memory; Optical devices; SONOS devices; Silicon on insulator technology; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269355
