A computational study of ballistic silicon nanowire transistors

Author

Wang, J. ; Polizzi, E. ; Lundstrom, M.

Author_Institution

Purdue Univ., West Lafayette, IN, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Using a rigorous 3D quantum simulator, we report a computational study of ballistic silicon nanowire transistors with arbitrary cross sections (i.e., triangular, rectangular or cylindrical). In comparison with the planar double-gate MOSFET, the silicon nanowire transistor shows promise (e.g., better electrostatic scaling for a given Si body thickness) and may provide a manufacturable opportunity to scale silicon transistors down below the scaling limit of planar MOSFETs.

Keywords

MOSFET; ballistic transport; elemental semiconductors; nanowires; semiconductor device models; silicon; 3D quantum simulator; Si; Si body thickness; ballistic silicon nanowire transistors; cylindrical cross section; electrostatic scaling; planar double-gate MOSFET; rectangular cross section; silicon transistor scaling; transistor cross section; triangular cross section; Computational modeling; Electrons; Electrostatics; FETs; MOSFET circuits; Nanoscale devices; Poisson equations; Quantum computing; Silicon; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269375

Filename

1269375

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2590852