Title :
A computational study of ballistic silicon nanowire transistors
Author :
Wang, J. ; Polizzi, E. ; Lundstrom, M.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
Using a rigorous 3D quantum simulator, we report a computational study of ballistic silicon nanowire transistors with arbitrary cross sections (i.e., triangular, rectangular or cylindrical). In comparison with the planar double-gate MOSFET, the silicon nanowire transistor shows promise (e.g., better electrostatic scaling for a given Si body thickness) and may provide a manufacturable opportunity to scale silicon transistors down below the scaling limit of planar MOSFETs.
Keywords :
MOSFET; ballistic transport; elemental semiconductors; nanowires; semiconductor device models; silicon; 3D quantum simulator; Si; Si body thickness; ballistic silicon nanowire transistors; cylindrical cross section; electrostatic scaling; planar double-gate MOSFET; rectangular cross section; silicon transistor scaling; transistor cross section; triangular cross section; Computational modeling; Electrons; Electrostatics; FETs; MOSFET circuits; Nanoscale devices; Poisson equations; Quantum computing; Silicon; Wire;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269375
