Title :
Scaling analysis of phase-change memory technology
Author :
Pirovano, A. ; Lacaita, A.L. ; Benvenuti, A. ; Pellizzer, F. ; Hudgens, S. ; Bez, R.
Author_Institution :
Politecnico di Milano, Italy
Abstract :
The scaling capability of chalcogenide-based phase-change memory (PCM) is discussed. Experimental and numerical results are presented, showing that the reset current scales down with the device contact area, reaching values as low as 50 /spl mu/A. The impact of thermal cross-talk between adjacent bits is investigated, showing that thermal disturbs will not limit the scaling of PCM down to the 65 nm technology node. Finally, scaling rules for the PCM technology are provided.
Keywords :
antimony compounds; germanium compounds; order-disorder transformations; random-access storage; semiconductor device models; 50 muA; 65 nm; Ge/sub 2/Sb/sub 2/Te/sub 5/; OUM; PCM scaling analysis; adjacent bit thermal cross-talk; chalcogenide-based phase-change memory; device contact area; nonvolatile semiconductor technology; ovonic unified memory; reset current scaling; thermal disturbs; Amorphous materials; Crystalline materials; Crystallization; Electric variables; Nonvolatile memory; Phase change materials; Phase change memory; Semiconductor materials; Switches; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269376
