Title :
Performance enhancement of 0.13/spl mu/m In/sub 0.65/GaAs PHEMT by reduction of parasitic effect using novel double-deck shaped (DDS) gate structure
Author :
Dae-Hyun Kim ; Seong-Jin Yeon ; Jae-Hak Lee ; Kwang-Seok Seo
Author_Institution :
Sch. of Electr. & Comput. Eng., Seoul Nat. Univ., South Korea
Abstract :
High performance 0.13 /spl mu/m In/sub 0.65/GaAs PHEMTs have been realized utilizing novel double-deck shaped (DDS) gate technology. By etching an additionally grown InGaAs contact layer through the initial line opening of the gate foot and forming a T-gate structure on top of the initial line, namely the DDS gate, a remarkable suppression of gate fringing capacitance could be obtained, which also led to an improvement of device microwave performance. Moreover, a large reduction of gate hole current, due to the impact ionization in the strained InGaAs channel layer, was achieved by operating the device in quasi enhancement mode region, which could be realized by removing InP etch-stopper selectively through a low damaged Ar-based RIE. These features enabled the suppression of the kink effect and enhanced the on-state breakdown voltage (BV/sub DS,ON/) in a DC I-V transfer curve.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; semiconductor device breakdown; sputter etching; 0.13 micron; 220 GHz; Ar; DDS gate; InGaAs; PHEMT performance enhancement; RIE; T-gate structure; additionally grown contact layer etching; double-deck shaped gate structure; etch-stopper selective removal; gate foot line opening; gate fringing capacitance suppression; gate hole current; impact ionization; kink effect suppression; microwave performance improvement; on-state breakdown voltage; parasitic effect reduction; quasi enhancement mode operating region; strained InGaAs channel layer; Cutoff frequency; Etching; Fabrication; Foot; Gallium arsenide; Impact ionization; Indium gallium arsenide; Indium phosphide; Microwave devices; PHEMTs;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269383
