DocumentCode :
2591152
Title :
Use of process simulators to assist in the design of processes for manufacturability
Author :
Kump, Michael R. ; Mylroie, S.W. ; Alexander, W.J.C. ; Walton, A.J.
Author_Institution :
Technol. Modeling Associates, Palo Alto, CA, USA
fYear :
1990
fDate :
11-12 Sep 1990
Firstpage :
15
Lastpage :
21
Abstract :
It is shown how semiconductor process simulation. by replacing numerous runsplits, can be a cost-effective way to design technologies for both optimal performance and manufacturability. The use of process and device simulators for designing for manufacturability is illustrated by considering two examples both drawn from experiences in semiconductor manufacturing. The first is the design of a high-sheet-resistivity implanted resistor to minimize its variability. The second is the design of certain aspects of a lightly doped drain (LDD) MOS process both to optimize the intrinsic device performance and to improve its manufacturability
Keywords :
digital simulation; electronic engineering computing; integrated circuit manufacture; semiconductor device manufacture; LDD MOS process; high-sheet-resistivity; implanted resistor; lightly doped drain; manufacturability; semiconductor manufacturing; semiconductor process simulation; Conductivity; Costs; Design for manufacture; Energy consumption; Manufacturing processes; Process design; Random processes; Resistors; Semiconductor device manufacture; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990
Conference_Location :
Danvers, MA
Type :
conf
DOI :
10.1109/ASMC.1990.111214
Filename :
111214
Link To Document :
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