Study of electrical properties of Al/SrTiO3/n-Si interfaces using capacitance measurements

Author

Tahir-ul-Islam ; Ali, Adnan ; Arshad, M.Imran ; Asghar, M. ; Mahmood, A. ; Muret, P.

Author_Institution

Dept. of Phys., Islamia Univ. of Bahawalpur, Bahawalpur

fYear

2007

fDate

18-20 Nov. 2007

Firstpage

1

Lastpage

3

Abstract

Electrical properties of Al/SrTiO₃ /n-Si, metal-insulator-semiconductor (MIS) structure have been carried out by employing capacitance measurements. Thin films of SrTiO₃ having thicknesses 50, 30 and 15 nm were grown on n-Si (N_D= (2-10) times 10¹⁵ cm^-3) by metal organo-chemical vapor deposition (MOCVD). Effective dielectric constant (k) of SrTiO₃ was found to be much lesser than the theoretical value (~300) and fluctuated with layer thickness in the range of 95 to 32. The observed decrease in dielectric constant has been explained on the basis of two layer model. Annealing under specific ambient has improved the dielectric properties of the samples. This paper contributes as the enabling technologies in the area of optoelectronic components fabrication for communications.

Keywords

MIS structures; MOCVD; aluminium; annealing; elemental semiconductors; permittivity; silicon; strontium compounds; Al-SrTiO₃-Si; annealing; capacitance; dielectric constant; electrical properties; metal-insulator-semiconductor structure; organo-chemical vapor deposition; thin films; Annealing; Capacitance measurement; Chemical vapor deposition; Dielectric constant; Dielectric materials; High-K gate dielectrics; Hydrogen; MOCVD; Metal-insulator structures; Random access memory; MIS; SrTiO3; capacitance measurements; dielectric constant;

fLanguage

English

Publisher

ieee

Conference_Titel

High Capacity Optical Networks and Enabling Technologies, 2007. HONET 2007. International Symposium on

Conference_Location

Dubai

Print_ISBN

978-1-4244-1828-2

Electronic_ISBN

978-1-4244-1829-9

Type

conf

DOI

10.1109/HONET.2007.4600279

Filename

4600279