Title :
A high efficiency 250W LDMOS amplifier for polar-transmitter at 940 MHz
Author_Institution :
Freescale Semiconductor, Toulouse, France
Abstract :
Summary form only given, as follows. A high efficiency base station amplifier using LDMOS is presented in the 900 MHz to 980 MHz band. LDMOS has widely demonstrated its ability to work efficiently within Doherty structure at attractive cost, and it is shown that it can also be used in a polar transmitter topology. The transistor is in inverted class F, and with appropriate optimization of the transistor, 65% efficiency can be achieved at 8 dB Output Back Off (OBO) from maximum power over the 900 Mhz–980 MHz band with 16.5 dB Gain.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973145