• DocumentCode
    2591218
  • Title

    A high efficiency 250W LDMOS amplifier for polar-transmitter at 940 MHz

  • Author

    Bouny, J.

  • Author_Institution
    Freescale Semiconductor, Toulouse, France
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. A high efficiency base station amplifier using LDMOS is presented in the 900 MHz to 980 MHz band. LDMOS has widely demonstrated its ability to work efficiently within Doherty structure at attractive cost, and it is shown that it can also be used in a polar transmitter topology. The transistor is in inverted class F, and with appropriate optimization of the transistor, 65% efficiency can be achieved at 8 dB Output Back Off (OBO) from maximum power over the 900 Mhz–980 MHz band with 16.5 dB Gain.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973145
  • Filename
    5973145