Title :
A high voltage high power (HiVP) class-E power amplifier at VHF
Author :
Alomar, W.A. ; Mortazawi, Amir
Author_Institution :
University of Michigan, Ann Arbor, United States
Abstract :
Summary form only given, as follows. A four stage cascoded class-E power amplifier based on a high voltage / high power technique (HiVP) technique has been designed and implemented. The amplifier is fabricated using four separate flanged LDMOS transistors. Drain voltage has been reduced to increase the maximum frequency of class-E operation mode and to reduce the maximum drain voltage swing to protect the transistor from breakdown. Measurement results show 69% power-added efficiency (PAE), 30.1 dB of gain and 51.8 W output power.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973146
