Title :
Unified mobility model for high-/spl kappa/ gate stacks [MISFETs]
Author :
Saito, S. ; Hisamoto, D. ; Kimura, S. ; Hiratani, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
We examined reduced mobility for MISFETs with high-/spl kappa/ gate dielectrics, which cannot be explained just by one scattering mechanism. We developed a comprehensive mobility model, in which various possible scattering sources, including fixed charges, roughness, and phase separation, are unified to account for the reduced mobility.
Keywords :
MISFET; carrier mobility; dielectric thin films; scattering; semiconductor device models; surface roughness; MISFET; fixed charges; gate dielectrics; high-k gate stacks; mobility reduction; phase separation; remote-charge-scattering; remote-surface roughness; scattering mechanism; unified mobility model; Capacitance-voltage characteristics; Crystallization; Electron mobility; Gaussian processes; High K dielectric materials; High-K gate dielectrics; Laboratories; MISFETs; Scattering; Silicon;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269400
