DocumentCode
2591263
Title
Unified mobility model for high-/spl kappa/ gate stacks [MISFETs]
Author
Saito, S. ; Hisamoto, D. ; Kimura, S. ; Hiratani, M.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fYear
2003
fDate
8-10 Dec. 2003
Abstract
We examined reduced mobility for MISFETs with high-/spl kappa/ gate dielectrics, which cannot be explained just by one scattering mechanism. We developed a comprehensive mobility model, in which various possible scattering sources, including fixed charges, roughness, and phase separation, are unified to account for the reduced mobility.
Keywords
MISFET; carrier mobility; dielectric thin films; scattering; semiconductor device models; surface roughness; MISFET; fixed charges; gate dielectrics; high-k gate stacks; mobility reduction; phase separation; remote-charge-scattering; remote-surface roughness; scattering mechanism; unified mobility model; Capacitance-voltage characteristics; Crystallization; Electron mobility; Gaussian processes; High K dielectric materials; High-K gate dielectrics; Laboratories; MISFETs; Scattering; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269400
Filename
1269400
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