Title :
Low noise balanced-CMOS on Si(110) surface for analog/digital mixed signal circuits
Author :
Teramoto, A. ; Hamada, T. ; Akahori, H. ; Nii, K. ; Suwa, T. ; Kotani, K. ; Hirayama, M. ; Sugawa, S. ; Ohmi, T.
Author_Institution :
New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan
Abstract :
This paper demonstrated CMOS characteristics on a Si(110) surface by using a surface flattening process and radical oxidation. By forming a MOS device on a Si(110) surface, a high-speed and low 1/f noise p-MOSFET can be realized. Furthermore, balanced current drivability of p-MOS and n-MOS in the CMOS (balanced CMOS) on Si(110) surface can be also realized. This is very useful for analog/digital mixed signal circuits.
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; elemental semiconductors; mixed analogue-digital integrated circuits; oxidation; semiconductor device noise; silicon; surface treatment; 1/f noise; Si; Si(110) surface; analog/digital mixed signal circuits; balanced current drivability; high-speed p-MOSFET; low noise balanced-CMOS; n-MOS device; p-MOS device; radical oxidation; surface flattening process; CMOS integrated circuits; MOSFETs; Mixed analog-digital integrated circuits; Oxidation; Random noise; Semiconductor device noise; Silicon; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269401
