Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and /spl delta/T/sub SOI/-induced scattering

Author

Uchida, K. ; Junji Koga ; Shin-ichi Takagi

fYear

2003

fDate

8-10 Dec. 2003

Abstract

The carrier transport mechanisms in single- and double-gate UTB MOSFETs are investigated. It is demonstrated that Coulomb scattering in UTB MOSFETs is greater than that in thicker body MOSFETs. It is found that, in higher Ns regions, the mobility of double-gate structures is smaller than that of single-gate structures in 4.3-nm body MOSFETs, which is due to the SOI-thickness-fluctuation-induced scattering. It is also demonstrated that Coulomb scattering is greatly suppressed in double-gate MOSFETs. The electrical characteristics of sub-1-nm body MOSFETs are also investigated.

Keywords

MOSFET; carrier mobility; scattering; /spl delta/T/sub SOI/-induced scattering; 4.3 nm; Coulomb scattering; SOI-thickness-fluctuation-induced scattering; UTB MOSFET; carrier transport mechanisms; double-gate MOSFET; single-gate MOSFET; ultrathin-body MOSFET; volume inversion; Charge pumps; Implants; Interface states; Laboratories; Large scale integration; MOSFETs; P-i-n diodes; Phonons; Scattering; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269402

Filename

1269402