DocumentCode
2591344
Title
Impact ionization in strained-Si/SiGe heterostructures
Author
Waldron, N.S. ; Pitera, A.J. ; Lee, M.L. ; Fitzgerald, E.A. ; del Alamo, J.A.
Author_Institution
MIT, Cambridge, MA, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
We have experimentally studied impact ionization (II) in a strained-Si/SiGe heterostructure. We found that, unlike bulk Si, II in this heterostructure has a positive temperature coefficient. Coupled with the severe self-heating that characterizes this heterostructure, this results in significantly higher levels of II when compared with reference Si devices operating under identical conditions.
Keywords
Ge-Si alloys; elemental semiconductors; impact ionisation; semiconductor heterojunctions; semiconductor materials; silicon; Si-SiGe; impact ionization positive temperature coefficient; self-heating; strained-Si technology; strained-Si/SiGe heterostructures; Buffer layers; CMOS technology; Germanium silicon alloys; Impact ionization; Radio frequency; Resistors; Rough surfaces; Silicon germanium; Testing; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269404
Filename
1269404
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