An expert system for process monitoring, diagnostics and control [VLSI and ULSI circuits]

Author

Nicollian, Edward H. ; Chen, Su-Shing ; Tsu, Ray

Author_Institution

North Carolina Univ., Charlotte, NC, USA

fYear

1990

fDate

11-12 Sep 1990

Firstpage

33

Lastpage

36

Abstract

An expert system for monitoring VLSI and ULSI integrated circuit process parameters which is based on the concepts of the charge-capacitance method is described. The process parameters determined are oxide leakage current, impedance to establish electric contact quality, oxide layer thickness, semiconductor doping profile, oxide fixed charge density, interface trap density, semiconductor band bending, and threshold voltage of a MOSFET. Instrumentation and measurement are discussed

Keywords

VLSI; computerised monitoring; doping profiles; electronic engineering computing; expert systems; integrated circuit manufacture; integrated circuit testing; leakage currents; manufacturing data processing; MOSFET; ULSI; VLSI; charge-capacitance method; electric contact quality; expert system; impedance; integrated circuit process parameters; interface trap density; oxide fixed charge density; oxide layer thickness; oxide leakage current; process monitoring; semiconductor band bending; semiconductor doping profile; threshold voltage; Condition monitoring; Control systems; Diagnostic expert systems; Impedance; Leakage current; MOSFET circuits; Semiconductor device doping; Threshold voltage; Ultra large scale integration; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990

Conference_Location

Danvers, MA

Type

conf

DOI

10.1109/ASMC.1990.111217

Filename

111217