An 8F/sup 2/ MRAM technology using modified metal lines

Author

Park, J.H. ; Jeong, W.C. ; Kim, H.J. ; Oh, J.H. ; Koo, H.C. ; Koh, G.H. ; Jeong, G.T. ; Jeong, H.S. ; Jeong, Y.J. ; Cho, S.L. ; Lee, J.E. ; Kim, H.J. ; Kim, Kunsu

Author_Institution

Adv. Technol. Dev., Kyunggi-Do, South Korea

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A novel 8F/sup 2/ cell structure for high density magnetic random access memory (MRAM) and its operating characteristics are proposed. In this new scheme, we formed bottom electrode contact (BEC) through twin metal lines (MLs) and a magnetic tunnel junction (MTJ) was located just on the BEC for the reduction of cell size. From the results of simulation and experiment, we have confirmed that the generated magnetic field in the new scheme is more uniform than that in the conventional scheme with a negligible reduction of writing field strength. We adopted a self-aligned BEC process to prevent electrical shorting between ML and BEC. To avoid electrical shorting and improve the magnetic properties of MTJs, a chemical mechanical polishing (CMP) process was adopted before MTJ deposition. As a result, we confirmed the feasibility of high-density 1T1MTJ MRAM, composed of 8F/sup 2/ cells with optimal MTJ characteristics.

Keywords

chemical mechanical polishing; magnetic storage; magnetic tunnelling; random-access storage; 1T1MTJ MRAM; 8F/sup 2/ cell structure; CMP; MRAM technology; MTJ; bottom electrode contact; chemical mechanical polishing; high density magnetic random access memory; magnetic random access memory; magnetic tunnel junction; twin metal lines; uniform generated magnetic field; writing field strength; Atomic layer deposition; Electrodes; Encapsulation; Etching; Rough surfaces; Space technology; Surface morphology; Surface roughness; Tellurium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269407

Filename

1269407