Title :
MRAM with lamellar structure as free layer
Author :
Baek, I.G. ; Lee, J.E. ; Kim, H.-J. ; Ha, Y.K. ; Bae, J.S. ; Oh, S.C. ; Park, S.O. ; Chung, U.-I. ; Lee, N.I. ; Kang, H.K. ; Moon, J.T.
Author_Institution :
Process Dev. Team, Semicond. R&D Center, Kyonggi-do, South Korea
Abstract :
The key factors to improve the switching characteristics are systematically analyzed to develop high density MRAM with a reliable operating margin. We demonstrated that roughness control of MTJ films, choice of free layer materials with small Ms, and optimized cell shape can effectively suppress the switching distribution. As a novel free layer scheme, a lamellar structure is proposed and found to improve the switching characteristics by suppressing the grain growth in the ferromagnetic layer.
Keywords :
magnetic storage; magnetic tunnelling; random-access storage; MTJ film roughness control; cell shape optimization; ferromagnetic layer grain growth suppression; free layer materials; high density MRAM; lamellar free layer structure; magnetic random access memory; magnetic tunnel junction; reliable operating margin; switching characteristics; switching field distribution; CMOS process; Magnetic films; Magnetic materials; Magnetic separation; Magnetic tunneling; Moon; Random access memory; Saturation magnetization; Shape control; Writing;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269408
