DocumentCode
2591448
Title
Update on SiC-based inverter technology
Author
Chinthavali, Madhu ; Zhang, Hui ; Tolbert, Leon M. ; Ozpineci, Burak
Author_Institution
Oak Ridge Nat. Lab., Oak Ridge, TN, USA
fYear
2009
fDate
Sept. 27 2009-Oct. 1 2009
Firstpage
71
Lastpage
79
Abstract
This paper presents a study of silicon carbide (SiC) technology which includes device characterization and modeling, inverter simulation, and test results for several prototype inverters. The static and dynamic characteristics of discrete devices and half bridge modules are presented. Test results of a 55 kW hybrid inverter with SiC Schottky diodes and an 18 kW all-SiC inverter using SiC JFETs and Schottky diodes are demonstrated.
Keywords
Schottky diodes; invertors; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; JFETs; Schottky diodes; SiC; hybrid inverter; inverter simulation; inverter technology; power 18 kW; power 55 kW; Degradation; Energy efficiency; Entropy; Inverters; Power engineering and energy; Renewable energy resources; Solar system; Temperature; Thermal pollution; Thermodynamics; Inverter; Silicon carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Conference, 2009. COBEP '09. Brazilian
Conference_Location
Bonito-Mato Grosso do Sul
ISSN
2175-8603
Print_ISBN
978-1-4244-3369-8
Electronic_ISBN
2175-8603
Type
conf
DOI
10.1109/COBEP.2009.5347590
Filename
5347590
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