Title :
Update on SiC-based inverter technology
Author :
Chinthavali, Madhu ; Zhang, Hui ; Tolbert, Leon M. ; Ozpineci, Burak
Author_Institution :
Oak Ridge Nat. Lab., Oak Ridge, TN, USA
fDate :
Sept. 27 2009-Oct. 1 2009
Abstract :
This paper presents a study of silicon carbide (SiC) technology which includes device characterization and modeling, inverter simulation, and test results for several prototype inverters. The static and dynamic characteristics of discrete devices and half bridge modules are presented. Test results of a 55 kW hybrid inverter with SiC Schottky diodes and an 18 kW all-SiC inverter using SiC JFETs and Schottky diodes are demonstrated.
Keywords :
Schottky diodes; invertors; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; JFETs; Schottky diodes; SiC; hybrid inverter; inverter simulation; inverter technology; power 18 kW; power 55 kW; Degradation; Energy efficiency; Entropy; Inverters; Power engineering and energy; Renewable energy resources; Solar system; Temperature; Thermal pollution; Thermodynamics; Inverter; Silicon carbide (SiC);
Conference_Titel :
Power Electronics Conference, 2009. COBEP '09. Brazilian
Conference_Location :
Bonito-Mato Grosso do Sul
Print_ISBN :
978-1-4244-3369-8
Electronic_ISBN :
2175-8603
DOI :
10.1109/COBEP.2009.5347590
