Title :
Noble FeRAM technologies with MTP cell structure and BLT ferroelectric capacitors
Author :
Oh, S.-H. ; Hong, S.-K. ; Noh, K.-H. ; Kweon, S.-Y. ; Kim, N.-K. ; Yang, Y.-H. ; Kim, J.-G. ; Seong, J.-Y. ; Jang, I.-W. ; Park, S.-H. ; Bang, K.-H. ; Lee, K.-N. ; Jeong, H.-J. ; Son, J.-H. ; Lee, S.-S. ; Choi, E.-S. ; Sun, H.-J. ; Yeom, S.-J. ; Ban, K.-D
Author_Institution :
Memory R&D Div., Hynix Semicond. Inc., Kyoungki-do, South Korea
Abstract :
A 16 Mb 1TIC FeRAM with a novel cell structure has been successfully developed with 0.25 /spl mu/m process technology using (Bi,La)/sub 4/Ti/sub 3/O/sub 12/ (BLT) capacitors for the first time. The developed FeRAM is highly scalable and reliable as a result of applying an MTP (merged top electrode and plate line) structure and BLT stacked capacitor, respectively.
Keywords :
bismuth compounds; ferroelectric capacitors; ferroelectric storage; lanthanum compounds; random-access storage; 0.25 micron; 16 Mbit; 1TIC FeRAM; BLT ferroelectric capacitors; BLT stacked capacitor; Bi/sub 4/Ti/sub 3/O/sub 12/; La/sub 4/Ti/sub 3/O/sub 12/; MTP cell structure; ferroelectric memory; merged top electrode/plate line structure; Artificial intelligence; Capacitors; Electrodes; Etching; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Research and development; Sun;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269409
