• DocumentCode
    2591513
  • Title

    An X-Band 10 W Monolithic Transmit-Receive GaAs FET Switch

  • Author

    Ayasli, Y. ; Mozzi, R. ; Hanes, L. ; Reynolds, L.D.

  • Volume
    82
  • Issue
    1
  • fYear
    1982
  • fDate
    30103
  • Firstpage
    42
  • Lastpage
    46
  • Abstract
    A monolithic transmit-receive GaAs FET switch capable of switching more than 10 W CW power with about 1 dB insertion loss and 26 dB isolation at X-band frequencies is reported.
  • Keywords
    Breakdown voltage; Equivalent circuits; Gallium arsenide; Impedance; Insertion loss; Microwave FETs; Microwave devices; Propagation losses; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1982.1112178
  • Filename
    1112178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2591513