Title :
An X-Band 10 W Monolithic Transmit-Receive GaAs FET Switch
Author :
Ayasli, Y. ; Mozzi, R. ; Hanes, L. ; Reynolds, L.D.
Abstract :
A monolithic transmit-receive GaAs FET switch capable of switching more than 10 W CW power with about 1 dB insertion loss and 26 dB isolation at X-band frequencies is reported.
Keywords :
Breakdown voltage; Equivalent circuits; Gallium arsenide; Impedance; Insertion loss; Microwave FETs; Microwave devices; Propagation losses; Switches; Switching circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1982.1112178
