Graphene-on-SiC and graphene-on-Si transistors and RF applications

Summary form only given, as follows. The unique ambipolar nature of graphene FETs can benefit various RF circuit applications, such as frequency multipliers, mixers and high-speed radiometers. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene MOSFETs to minimize parasitics and improve gate modulation efficiency in the channel. We present recent progress in epitaxial graphene (n, p)-MOSFETs on both SiC and Si substrates for graphene-on-SiC and graphene-on-Si technologies.