• DocumentCode
    2591551
  • Title

    Reemergence of the surface-potential-based compact MOSFET models

  • Author

    Gildenblat, G. ; Cai, X. ; Chen, T.-L. ; Gu, X. ; Wang, H.

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2003
  • fDate
    8-10 Dec. 2003
  • Abstract
    This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.
  • Keywords
    MOSFET; linearisation techniques; semiconductor device models; surface potential; MOSFET modeling; streamlined surface potential approximation; surface-potential-based compact MOSFET model; symmetric linearization method; Equations; Harmonic distortion; MOSFET circuits; Physics; Power MOSFET; Power supplies; Radio frequency; Tunneling; Varactors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-7872-5
  • Type

    conf

  • DOI
    10.1109/IEDM.2003.1269415
  • Filename
    1269415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2591551