Title :
Graphene electronics for RF applications
Author :
Wang, Huifang ; Hsu, Allen ; Kim, Kunsu ; Kong, Jackson ; Palacios, T.
Author_Institution :
MIT, Cambridge, United States
Abstract :
Summary form only given, as follows. In this paper, we review the recent progress on graphene-based electronic devices for RF applications. The growth and technology of graphene transistors with fT.Lg product of 24 GHz.µm are discussed. These devices show excellent potential for high speed RF applications and frequency multiplier circuits with cut-off frequencies more than 1.4 GHz have been demonstrated. The challenges facing this rising technology and its feasibility for new applications in RF communications are also discussed.
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5973166