Title :
New compact model for induced gate current noise [MOSFET]
Author :
van Langevelde, R. ; Paasschens, J.C.J. ; Scholten, A.J. ; Havens, R.J. ; Tiemeijer, L.F. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
Accurate compact modeling of induced gate noise is a prerequisite for RF CMOS circuit design. Existing models underestimate the induced gate noise for short-channel devices. In this paper, a new model is introduced, based on an improved Klaassen-Prins approach, which accurately accounts for velocity saturation. The model accurately describes noise without fitting any additional parameters.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; Klaassen-Prins method; MOSFET compact model; RF CMOS circuit design; induced gate current noise; short-channel devices; velocity saturation; Circuit noise; Circuit synthesis; Equations; Laboratories; MOSFET circuits; Noise measurement; Radio frequency; Semiconductor device modeling; Solid modeling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269416
