Title :
Novel cell structure of PRAM with thin metal layer inserted GeSbTe
Author :
Yi, J.H. ; Ha, Y.H. ; Park, J.H. ; Kuh, B.J. ; Horii, H. ; Kim, Y.T. ; Park, S.O. ; Hwang, Y.N. ; Lee, S.H. ; Ahn, S.J. ; Lee, S.Y. ; Hong, J.S. ; Lee, K.H. ; Lee, N.I. ; Kang, H.K. ; U-In Chung ; Moon, J.T.
Author_Institution :
Adv. Process Dev. PT, Samsung Electron. Co. Ltd., Gyeonggi-Do, South Korea
Abstract :
We have developed a novel cell structure of PRAM with metal interlayer. This novel structure has been proposed to solve the over-programming fail. We have examined the cause of over-programming by simulation of the phase transition of chalcogenide and successfully demonstrated reliable cell operation of this novel structure in writing current level, crystallization speed, and endurance. It can be explained by a model in which the metal interlayer is a local heat sink and the top GST layer is a thermal insulator.
Keywords :
amorphisation; crystallisation; germanium compounds; random-access storage; solid-state phase transformations; titanium compounds; GST thermal insulator layer; GeSbTe-TiN; PRAM cell structure; chalcogenide phase transition; crystallization speed; endurance; local heat sink; metal interlayer; over-programming fail; phase-change RAM; phase-change random access memory; thin metal layer inserted GeSbTe; writing current level; Amorphous materials; Amorphous semiconductors; Conductivity; Crystalline materials; Crystallization; Heat sinks; Phase change materials; Phase change random access memory; Tin; Writing;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269424
