Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation

Author

Wei Yip Loh ; Byung Jin Cho ; Moon Sig Joo ; Li, M.F. ; Chan, D.S.H. ; Mathew, Sanu ; Dim-Lee Kwong

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a polarity dependent breakdown in high-k stacks. A model of charge trapping at different spatial locations in HfAlO/sub x/ with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.

Keywords

MOSFET; Weibull distribution; aluminium compounds; dielectric thin films; electron traps; hafnium compounds; hole traps; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; tantalum compounds; HfAlO-TaN; MOSFET; breakdown mechanism; carrier separation; charge trapping polarity dependence; electron trapping; high-k dielectrics; hole trapping; interfacial layer; metal gate electrode; polarity dependent breakdown; statistical Weibull distribution; Charge carrier processes; Dielectric breakdown; Electric breakdown; Electrodes; Electron traps; High K dielectric materials; High-K gate dielectrics; Rapid thermal annealing; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269430

Filename

1269430