Characterization and comparison of the charge trapping in HfSiON and HfO/sub 2/ gate dielectrics

Author

Shanware, A. ; Visokay, M.R. ; Chambers, J.J. ; Rotondaro, Antonio L. P. ; McPherson, Jacqueline ; Colombo, Luigi

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Charge trapping in HfSiON and HfO/sub 2/ gate dielectrics was studied using both DC and pulsed I/sub D/-V/sub G/ characterization techniques. The data shows a significant amount of hysteresis in HfO/sub 2/ but negligible instability in HfSiON. Constant voltage stress measurements of HfO/sub 2/ and HfSiON films show that the threshold voltage shift in HfO/sub 2/ films is as much as 10 times higher than that of HfSiON. Further, modeling of the time dependence of the threshold voltage shows that the trap capture cross section responsible for the instability of HfO/sub 2/ films is 10 times higher than the trap capture cross section of HfSiON. Our data indicate that amorphous HfSiON has better electrical stability than HfO/sub 2/.

Keywords

MOSFET; dielectric hysteresis; dielectric thin films; electron traps; hafnium compounds; hole traps; stability; HfO/sub 2/; HfSiON; NFET; NMOS devices; amorphous HfSiON electrical stability; charge trapping; dielectric instability; gate dielectrics; high-k gate dielectrics; hysteresis; threshold voltage shift; trap capture cross section; voltage stress measurements; Amorphous materials; CMOS process; Dielectric devices; Dielectric measurements; Hafnium oxide; High K dielectric materials; Hysteresis; Pulse measurements; Stability; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269433

Filename

1269433