Title :
Characterization and comparison of the charge trapping in HfSiON and HfO/sub 2/ gate dielectrics
Author :
Shanware, A. ; Visokay, M.R. ; Chambers, J.J. ; Rotondaro, Antonio L. P. ; McPherson, Jacqueline ; Colombo, Luigi
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Charge trapping in HfSiON and HfO/sub 2/ gate dielectrics was studied using both DC and pulsed I/sub D/-V/sub G/ characterization techniques. The data shows a significant amount of hysteresis in HfO/sub 2/ but negligible instability in HfSiON. Constant voltage stress measurements of HfO/sub 2/ and HfSiON films show that the threshold voltage shift in HfO/sub 2/ films is as much as 10 times higher than that of HfSiON. Further, modeling of the time dependence of the threshold voltage shows that the trap capture cross section responsible for the instability of HfO/sub 2/ films is 10 times higher than the trap capture cross section of HfSiON. Our data indicate that amorphous HfSiON has better electrical stability than HfO/sub 2/.
Keywords :
MOSFET; dielectric hysteresis; dielectric thin films; electron traps; hafnium compounds; hole traps; stability; HfO/sub 2/; HfSiON; NFET; NMOS devices; amorphous HfSiON electrical stability; charge trapping; dielectric instability; gate dielectrics; high-k gate dielectrics; hysteresis; threshold voltage shift; trap capture cross section; voltage stress measurements; Amorphous materials; CMOS process; Dielectric devices; Dielectric measurements; Hafnium oxide; High K dielectric materials; Hysteresis; Pulse measurements; Stability; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269433
